CAS Key Laboratory of Quantum Information, led by Academician Guo Guangcan of the University of Science and Technology of China, has made important progress in the research on semiconductor gated quantum dots recently. Professor Guo Guoping's research group and his collaborators in this lab deeply explored the possibility of applying two-dimensional layered transition metal chalcogenides to semiconductor quantum chips. For the first time, experimentally realized fully electronically controlled quantum in a semiconductor flexible two-dimensional material system Point device.
After decades of development, semiconductor gated quantum dot as a quantum transistor has become a popular candidate for quantum chips. The two-dimensional material system represented by graphene has become the focus of research in flexible electronics and quantum electronics due to its natural monolayer thickness, excellent electrical properties and easy integration. However, after more than ten years since the discovery of graphene, scientists have tried a lot of experiments and found that the energy bandgap in graphene, interface defects and other impurities on the performance of quantum dot devices have a great impact. Until now, quantum dots in two-dimensional materials have not been able to achieve effective electrical regulation.
In response to this situation, Guo Guoping's team worked with Takashi Taniguchi and Kenji Watanabe, researchers at Japan's National Institute of Materials Research, and Professor Franco Nori at the Physical and Chemical Research Institute to select the new two-dimensional material, molybdenum disulfide, for further study. The material has a suitable bandgap, strong spin-orbit coupling strength and rich spin-energy valley-related physical phenomena, and therefore has a wide range of quantum electronics, especially spintronics and energy valley electronics Application prospects.
After a large number of attempts, the research group used a series of modern semiconductor processes such as micro-nano processing and low-temperature LED irradiation, combined with the boron nitride packaging technology widely used in the current two-dimensional material system research, effectively reducing the impurities in the quantum dot structure , Defects, etc., for the first time in such materials to achieve a fully electric controllable double quantum dot structure.
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